Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 21: Thin Film Characterisation: Structure Analysis and Composition II

DS 21.2: Talk

Tuesday, March 21, 2017, 09:45–10:00, CHE 91

Growth and characterization of VO₂ thin films deposited on various perovskite and complex oxides single crystal substrates — •Adrian Petraru¹, Gabriel Bello Waldschütz¹, Ravi Droopad², and Hermann Kohlstedt¹ — ¹Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, Kiel, Germany — ²Texas State University, Ingram School of Engineering, San Marcos, TX 78666 USA

Correlated electron materials exhibiting first-order metal-insulator phase transitions (MIT) accompanied by an abrupt change in the resistivity over several orders of magnitude have recently attracted considerable attention for applications in the field of non-volatile memories due to their sub-nanosecond transition timescale and electrical read-out scheme. Oxide multilayer heteroepitaxy combining VO₂ films and conducting/ferroelectric/dielectric films open new opportunities in creating functional devices. VO₂ thin films were deposited on various single crystal complex oxide substrates compatible with ferroelectric PbZr_xTi_1−xO₃ (PZT) and BaTiO₃ thin films using pulsed laser deposition method. Thus, SrTiO₃(100), PZT/SrRuO₃ buffered SrTiO₃(100), SrTiO₃S buffered Si(100) substrates, NdGaO3(110), MgO(100), PZT/SrRuO₃ buffered GdScO₃(110), and PMN-PT(001) substrates were used in combination with VO₂ films. The deposited VO₂ films were structurally charaterized by X-ray diffraction and Raman scattering spectroscopy. Electrical measurements show a change in resistance of the VO₂ across MIT ranging from 10² to 10⁴ times.