Dresden 2017 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 27: 2D Materials beyond Graphene (jointly with O)

DS 27.10: Poster

Tuesday, March 21, 2017, 18:30–20:30, P2-EG

Ultra-thin Bi2Te3 films on semiconductor substrates — •Mert Taşkin and Oğuzhan Gürlü — Istanbul Technical University, Department of Physics, Maslak, 34469, Istanbul, Turkey

Bi2Te3 has a rhombohedral crystal structure and it consists of quintuple layers (QLs) along c-axis. QLs bind with van der Waals interaction. Consequently, the crystal can be cleaved from this interface and the resulting Te1 terminated (0001) surface can be investigated with scanning probe techniques. Bi2Te3 was shown to be a topological insulator (TI) besides being a thermoelectric material; yet, the knowledge on the electronic structure of this material at ultra-thin limit is still incomplete. Before making any attempt at an application with Bi2Te3 in the 2D limit, it is quite important to understand its general physical properties. We modified chemical vapor deposition (CVD) technique to grow ultra-thin Bi2Te3 films on semiconductor/metal-oxide surfaces. In this process we obtained ultra-thin films and micro-particles of Bi2Te3. The heights of obtained Bi2Te3 films are measured to be a few QLs. The radius of Bi2Te3 micro-particles are 1-5 micrometers. Here the structural and spectroscopic characteristics of these ultra-thin films will be discussed.