Dresden 2017 –
wissenschaftliches Programm
DS 28: Focussed Session: Oxide Semiconductors for Novel Devices I
Mittwoch, 22. März 2017, 09:30–13:00, CHE 89
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09:30 |
DS 28.1 |
Topical Talk:
Self-consistent hybrid functional calculations: Electronic and optical properties of oxide semiconductors — •Daniel Fritsch, Benjamin Morgan, and Aron Walsh
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10:00 |
DS 28.2 |
High-throughput screening of transparent conducting oxides — •Christopher Sutton, Robert J. N. Baldock, Luca M. Ghiringhelli, and Matthias Scheffler
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10:15 |
DS 28.3 |
Pressure-dependent elastic properties of Ga2O3 in the α and β phase from first principles — •Konstantin Lion, Dmitrii Nabok, Pasquale Pavone, and Claudia Draxl
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10:30 |
DS 28.4 |
Ab-initio lattice dynamics of Ga2O3 polymorphs with an emphasis on polar phonon modes — •Rut Waldenfels, Dmitrii Nabok, Pasquale Pavone, and Claudia Draxl
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10:45 |
DS 28.5 |
Anisotropic thermal conductivity in Ga2O3 — •Mitdank Rüdiger, Handwerg Martin, Galazka Zbigniew, and Fischer Saskia F.
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11:00 |
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15 min. break.
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11:15 |
DS 28.6 |
Topical Talk:
Exceptional Points in Oxide Bulk and Metamaterials — •Marius Grundmann
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11:45 |
DS 28.7 |
Dielectric function and band structure of α Ga2O3 — •Martin Feneberg, Anderson Janotti, Maciej D. Neumann, Norbert Esser, Luis Artus, Ramon Cuscó, Tomohiro Yamaguchi, and Rüdiger Goldhahn
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12:00 |
DS 28.8 |
Topical Talk:
Kinetics and thermodynamcis of binary and ternary oxides during molecular beam epitaxy — •Patrick Vogt and Oliver Bierwagen
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12:30 |
DS 28.9 |
Tin Assisted Growth of є-Ga2O3 on c-plane Sapphire — •Max Kracht, Alexander Karg, Jörg Schörmann, and Martin Eickhoff
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12:45 |
DS 28.10 |
Transport properties of the In2O3 surface electron accumulation layer — •Alexandra Papadogianni, Julius Rombach, and Oliver Bierwagen
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