Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 28: Focussed Session: Oxide Semiconductors for Novel Devices I

DS 28.10: Talk

Wednesday, March 22, 2017, 12:45–13:00, CHE 89

Transport properties of the In₂O₃ surface electron accumulation layer — •Alexandra Papadogianni, Julius Rombach, and Oliver Bierwagen — Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

In₂O₃ is a natively n-type transparent semiconducting oxide with unique properties attractive for several applications. Particularly interesting is its surface electron accumulation layer (SEAL), which enables gas-sensing applications. The SEAL electrical transport properties will be the main focus of this talk.
We study single-crystalline In₂O₃ thin films grown by plasma-assisted molecular beam epitaxy (PA-MBE) on insulating buffer layers achieved by doping with Ni as a new compensating acceptor, in order to remove potential interface conductance. This provides us with a model system of reduced complexity, with the electrical conductivity of these films essentially consisting of two parallel contributions: the bulk of the film and SEAL. To further modulate either the SEAL or the bulk in a targeted way and disentangle their contributions to the overall conductivity, we "turn off" the SEAL by an oxygen-plasma treatment and the bulk by Ni-doping. As a result, this enables us to study the temperature dependent transport properties of each individual conductive system.