Dresden 2017 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 28: Focussed Session: Oxide Semiconductors for Novel Devices I
DS 28.8: Topical Talk
Wednesday, March 22, 2017, 12:00–12:30, CHE 89
Kinetics and thermodynamcis of binary and ternary oxides during molecular beam epitaxy — •Patrick Vogt and Oliver Bierwagen — Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
Group-III and IV oxide semiconductors such as Ga2O3, In2O3, and SnO2 may be efficiently n-type doped and have generated much interest due to their wide band gaps, optical transparency in the visible, as well as deep ultra-violet (DUV) regime of light. Alloying binary to ternary systems, combines their properties depending on their metal (Me) concentration, facilitates band gap engineering, and enables the growth of heterostructures, for applications such as transparent electronics, power transistors, or DUV detectors.
This talk presents a comprehensive understanding of the reaction kinetics and thermodynamics of oxides grown by plasma-assisted molecular beam epitaxy (MBE). The defined growth surface chemistry during MBE makes it an ideal system for studying fundamental growth processes. Knowing the reaction behavior of materials allows the systematic manipulation of their crystal and electronic characteristics depending on all growth parameters. Semi-empirical macroscopic kinetic growth models are presented predicting the Me incorporation and desorption of the mentioned compounds. These models may be generalized for other oxide systems and give information about the underlying reaction mechanisms these compounds are based on.
The findings are qualitatively applicable to other growth techniques such as pulsed laser- and metal-organic vapor phase deposition.