Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 28: Focussed Session: Oxide Semiconductors for Novel Devices I

DS 28.9: Vortrag

Mittwoch, 22. März 2017, 12:30–12:45, CHE 89

Tin Assisted Growth of є-Ga₂O₃ on c-plane Sapphire — •Max Kracht¹, Alexander Karg¹, Jörg Schörmann¹, and Martin Eickhoff^1,2 — ¹I. Physikalisches Institut, Justus Liebig Universität, Gießen, Germany — ²Institut für Festkörperpysik, Bremen,Germany

Gallium oxide can crystallize in different polymorphs. The most common phase β-Ga₂O₃ is a promising material for high power devices and has therefore been widely studied. Although most physical properties such as the large band gap (≈ 5 eV) are expected to be comparable for the different polymorphs , high quality material is needed to study their characteristics in detail. For example theoretical studies predict a high spontaneous polarization in є-Ga₂O₃ , which would allow the realization of heterostructures with a two dimensional electron gas with high sheet carrier densities . This work focuses on the growth of gallium oxide on c-plane Al₂O₃ by plasma assisted molecular beam epitaxy. In the metal-rich growth regime gallium sub-oxide Ga₂O, which evaporates at growth temperature, is formed. With the addition of a small tin flux (flux ratio Ga/Sn = 10000) we can suppress this sub-oxide-etching and expand the growth window to more metal-rich conditions. Under these conditions phase pure є-Ga₂O₃ is formed. A growth model for this tin assisted growth mode is presented.