Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 3: Thin Film Characterisation: Structure Analysis and Composition I

DS 3.12: Talk

Monday, March 20, 2017, 12:30–12:45, CHE 91

Interphase Formation and Band Bending in Organic and Inorganic Semiconductor Films Examined with Hard X-ray Photoelectron Spectroscopy — •Martin Schmid, Benedikt P. Klein, Claudio K. Krug, Stefan R. Kachel, Malte Sachs, Min Chen, and J. Michael Gottfried — Fachbereich Chemie, Philipps-Universität Marburg

Hard X-ray photoelectron spectroscopy (HAXPES) allows to extend the information depth of photoelectron spectroscopy up to several tens of nanometers into a bulk material. This is achieved by using high energy photons (hν = 2 − 10 keV) to generate photoelectrons with high kinetic energies and accordingly larger mean free paths within solid materials. In a HAXPES experiment one integrates the signal contributions from many layers within the material, however the extraction of quantitative local information with regard to individual layers from the integral signal is in general not trivial. We will demonstrate how genetic optimization routines can be used to accomplish this task with two examples. In a first example we use this approach to characterize the reaction zone between 2H-tetraphenylporphyrin (2HTPP) films and metallic cobalt and iron layers. We find that the width of the reaction zone crucially depends on the sample temperature during preparation. In a second example we examine the depth dependent, local electrostatic potential (band bending) at a GaP/Si(001) heterojunction. Funding by DFG through SFB 1083 and by Verband der Chemischen Industrie e.V. is gratefully acknowledged.