Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 3: Thin Film Characterisation: Structure Analysis and Composition I
DS 3.6: Vortrag
Montag, 20. März 2017, 10:45–11:00, CHE 91
Synchrotron radiation damage on Copper Naphthalocyanine layers — •Peter Roese1,2, Philipp Espeter1,2, Karim Shamout1,2, Ulf Berges1,2, and Carsten Westphal1,2 — 1Experimentelle Physik I - Technische Universität Dortmund, Otto-Hahn-Str. 4a, D-44221 Dortmund — 2DELTA - Technische Universität Dortmund, Maria-Goeppert-Mayer-Str. 2, D-44221 Dortmund
The organic semiconductor naphthalocyanine includes a delocalized π-electronic system. The fascinating properties of naphthalocyanine are based on the delocalized π-electronic system. For applications the molecule is being studied as a perspective candidate for organic solar cells, organic LED’s and molecular switches. Furthermore, using naphthalocyanines as a photosensibilisator in cancer treatment utilizes the strong absorption properties in the visible spectrum. Here, we present the investigation of synchrotron radiation damage on copper- and free-base naphthalocyanine layers (CoNc, H2Nc) on an Ag(110) surface using x-ray photoelectron spectroscopy (XPS) at the U55 beamline 11 at DELTA. In this study we report on synchrotron radiation damage induced changes at the nitrogen bonds while no changes at the C 1s signals occur. Furthermore, the reduction of the photon density by moving the experimental chamber out of focus reduced radiation damage significantly. Now, it was possible to perform photoelectron diffraction (XPD) measurements with these systems.