Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 3: Thin Film Characterisation: Structure Analysis and Composition I

DS 3.8: Talk

Monday, March 20, 2017, 11:30–11:45, CHE 91

Reactive ion beam sputter deposition of TiO2: Influence of deposition parameters on thin film properties — •Thomas Lautenschläger, Daniel Spemann, Annemarie Finzel, Erik Thelander, Micheal Mensing, Frank Frost, and Carsten Bundesmann — Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, 04318 Leipzig, Germany

In physical vapor deposition (PVD), the properties of film forming particles strongly influence the growth process. Ion beam sputter deposition (IBSD) is a versatile PVD technique, as it offers several possibilities to alter the properties of the film forming particles. Reactive IBSD was used to deposit TiO2 thin films. The influence of sputtering geometry, ion energy, and ion species on thin film characteristics was investigated. The growth rate shows an over-cosine angular distribution, tilted in forward direction, and was found to increase with increasing ion energy and incidence angle. This behavior is in good agreement with the well-known dependence of the sputtering yield. The deposited films were amorphous, stoichiometric, and contained a considerable amount of primary particles. The concentration of inert gas was found to depend mainly on sputtering geometry and ion species. Surface roughness was well below 1 nm and depends mainly on sputtering geometry. Similarly, the refractive index changes systematically with the scattering geometry. These changes are strongly correlated with systematic variations in the mass density. The observations are assigned to variations of the angular and energy distribution of the sputtered target particles and the backscattered primary particles.