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DS: Fachverband Dünne Schichten

DS 3: Thin Film Characterisation: Structure Analysis and Composition I

DS 3.9: Vortrag

Montag, 20. März 2017, 11:45–12:00, CHE 91

Properties of SiO2 films grown by ion beam sputter deposition — •Maria Mateev, Thomas Lautenschläger, Daniel Spemann, Annemarie Finzel, Michael Mensing, Frank Frost, and Carsten Bundesmann — Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, 04318 Leipzig, GER

Ion beam sputter deposition (IBSD) is an established physical vapor deposition technique that provides several possibilities to study the influence of certain process parameters on the film properties. Sputtering of a Si target in a reactive oxygen atmosphere using Ar and Xe as primary ions was used to grow SiO₂ films on silicon substrates. The sputtering geometry, ion energy and ion species were varied systematically and their influence on the sputtering yield and film properties was investigated. Thickness, index of refraction, composition, mass density, and surface roughness were determined with the help of ellipsometry, Rutherford backscattering spectrometry, X-ray reflectometry and atomic force microscopy, respectively. The SiO₂ growth rate increases with increasing ion energy and incidence angle between ion beam and target normal. Furthermore, thickness, index of refraction, stoichiometry, mass density and surface roughness show a strong correlation with the sputtering geometry. The ion species also has an impact on the film properties, the influence of the ion energy is rather small. A considerable amount of primary inert gas particles is found in the deposited films.