Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 30: Two-dimensional materials IV (jointly with HL/TT)
DS 30.13: Vortrag
Mittwoch, 22. März 2017, 13:00–13:15, POT 51
Evolution of electronic structure of few-layer phosphorene from angle-resolved photoemission spectroscopy of black phosphorous — •Niels Ehlen1, Boris Senkovskiy1, Alexander Fedorov1,2,3, Andrea Perucchi4, Paola Di Pietro4, Antonio Sanna5, Gianni Profeta6, Luca Petaccia4, and Alexander Grüneis1 — 1Institute of Physics II, University of Cologne, Germany — 2IFW Dresden, Germany — 3St. Petersburg State University, Russia — 4Elettra Sincrotrone Trieste, Italy — 5Max Planck Institute of Microstructure Physics, Halle, Germany — 6Department of Physical and Chemical Sciences/SPIN-CNR, University of L’Aquila, Italy
A complete set of tight-binding parameters for the description of the quasiparticle dispersion relations of black phosphorous (BP) and N-layer phosphorene with N=1…∞ is presented. The parameters, which describe valence and conduction bands, are fit to angle-resolved photoemission spectrocopy (ARPES) data of pristine and lithium doped BP. We show that zone-folding of the experimental three-dimensional electronic band structure of BP is a simple and intuitive method to obtain the layer-dependent two-dimensional electronic structure of few-layer phosphorene. Zone-folding yields the band gap of N-layer phosphorene in excellent quantitative agreement to experiments and ab-initio calculations. A combined analysis of optical absorption and ARPES spectra of pristine and doped BP are used to estimate a value for the exciton binding energy of BP.