Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 30: Two-dimensional materials IV (jointly with HL/TT)

DS 30.7: Vortrag

Mittwoch, 22. März 2017, 11:00–11:15, POT 51

Interlayer screening in n-doped bilayer and trilayer transition metal dichalcogenides — •Andor Kormányos¹, Viktor Zólyomi², and Guido Burkard¹ — ¹University of Konstanz, Germany — ²Manchester University, United Kingdom

We derive an effective Hamiltonian based on the k.p approach that describes the dispersion at the band edges of the conduction band of bilayer and trilayer transition metal dichalcogenides (TMDCs). This model is then used to consider n-doped bilayer MoS₂ placed in uniform external electric field. We discuss the charge re-distribution between the layers due to the electric field and calculate the bandgap that opens at the K-point of the Brillouin zone in self-consistent Hartree approximation. We point out the relation between the induced band-gap and the quantum capacitance and briefly discuss the relevance of our results to recent photoluminiscence experiments in double gated bilayer MoS₂.