Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 32: Focussed Session: Oxide Semiconductors for Novel Devices II

DS 32.1: Topical Talk

Wednesday, March 22, 2017, 14:45–15:15, CHE 89

Defect induced magnetic or optical properties in gallium-based oxides — •Laurent Binet and Didier Gourier — Chimie-ParisTech, Paris, France

Gallium based oxides such as Ga2O3 and ZnGa2O4 are wide-gap transparent conducting oxides, which have been receiving a growing interest. Indeed, their electrical, optical and magnetic properties can be tuned by intrinsic defects or doping.

In Ga2O3, the magnetic interaction between the delocalized electron spins released by intrinsic shallow donors and the gallium nuclear spins results in an original memory effect, the so-called bistable conduction electron spin Resonance, which is based on a bistable dynamic nuclear polarization. This effect appears in the magnetic resonance of the conduction electrons as the possibility of switching between two different resonance states by acting on the external magnetic field, the microwave power or the temperature.

In ZnGa2O4, which shares some common features with Ga2O3, intrinsic defects are able to store a fraction of the excitation energy of Cr3+ dopants, which is responsible of a long persistent luminescence of Cr3+ in the red-near infrared. This unprecedented property can be applied to in vivo optical imaging of tumours.