Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 32: Focussed Session: Oxide Semiconductors for Novel Devices II

DS 32.5: Topical Talk

Mittwoch, 22. März 2017, 16:30–17:00, CHE 89

Integration of Oxide Semiconductors with Traditional Semiconductors - A New Twist — •Scott Chambers — Pacific Northwest National Laboratory, Richland, Washington, USA

Over the past two decades, a significant amount of research has been carried out on the integration of oxides with Si and various III-V semiconductors, most notably GaAs. In much of this work, the emphasis has been on the development of new gate dielectrics. However, other efforts have looked into the discovery and utilization of novel functional oxides as more active components in devices. In contrast, Ge has received relatively little attention. Yet, Ge has many highly desirable properties, including high electron and hole mobilities and a small bandgap. The latter is of particular interest for visible light harvesting applications, such as water splitting.

In this talk, I will present our recent work on the MBE growth and properties of SrZrxTi1-xO3 (SZTO) on p-Ge(001), a system with considerable potential as a photocathode for the hydrogen evolution reaction associated with water splitting. As-grown SZTO is typically n-type due to the formation of oxygen vacancies resulting from the low O2 partial pressure required to prevent oxidation of the Ge substrate during MBE growth. I will present our investigation of band alignment at the n-SZTO/p-Ge heterojunction via high-energy-resolution x-ray photoemission spectroscopy (XPS), along with preliminary results on water chemistry with the SZTO surface by means of ambient-pressure XPS and in situ photoelectrochemistry.