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DS: Fachverband Dünne Schichten

DS 32: Focussed Session: Oxide Semiconductors for Novel Devices II

DS 32.6: Vortrag

Mittwoch, 22. März 2017, 17:00–17:15, CHE 89

Growth-control of the ordered double-perovskite stucture in (Pr_0.5Ba_0.5)CoO_3−δ thin films — •Felix Gunkel¹, Clemens Hausner², David N. Müller², Lei Jin^2,3, Chunlin Jia^2,3, Daniel Bick¹, Theo Schneller¹, Ilia Valov², and Regina Dittmann² — ¹Institute of Electronic Materials (IWE2), RWTH Aachen University — ²Peter Grünberg Institut, Forschungszentrum Jülich GmbH — ³Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Jülich

The complex oxide compound (Pr_0.5Ba_0.5)CoO_3−δ (PBCO) is considered as an efficient catalytic oxide for oxygen evolution half-reaction (OER) taking place during water splitting operation. We discuss structural and electrical properties of epitaxial PBCO thin films serving a model systems for exploring atomistic processes during OER. PBCO thin films are synthesized in a disordered and in an ordered double-perovskite crystal structure by controlling the growth temperature during pulsed laser deposition. The thin films show defined surface morphology and crystal orientation. During the growth process, the transition from disordered to ordered phase can be monitored directly by means of electron diffraction (RHEED). The epitaxial thin films show catalytic activity comparable to their porous counter parts fabricated by chemical routes, making them ideal model templates for systematic studies. The ability to control the ordered double-perovskite phase of PBCO bears the potential to force the formation of structural oxygen vacancies within the lattice with atomic precision and to tailor active sites for OER on the nanoscale.