Dresden 2017 – scientific programme
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DS: Fachverband Dünne Schichten
DS 32: Focussed Session: Oxide Semiconductors for Novel Devices II
DS 32.8: Talk
Wednesday, March 22, 2017, 17:30–17:45, CHE 89
Characterization of Unipolar Zinc-Tin-Oxide Devices — •Sofie Bitter, Peter Schlupp, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Exp. Physik II, Germany
Amorphous zinc-tin-oxide (ZTO) consists of naturally abundant, non-toxic elements only and can be deposited at room temperature with a tunable electron density between 1016 cm−3 and 1019 cm−3 and a mobility as high as 10 cm2/Vs [1,2]. Therefore, ZTO is a suitable material for low-cost, flexible, transparent transistors and thus low-cost and bendable electronic applications.
We present metal semiconductor field effect transistors (MESFETs) using amorphous ZTO as n-type channel. Room temperature long throw magnetron sputtering from a target with a composition of 67% SnO2 and 33% ZnO was used to deposit the ZTO channel [3]. On/Off ratios of 105 are achieved for reactive sputtered Pt gate contacts. The stability of the MESFETs under positive and negative bias stress is investigated. Further, an aging of unipolar devices based on ZTO is reported, which increases the on/off ratio of the devices.
[1] Bitter et al., ACS Comb. Sci., 18, 4, 2015.
[2] Jayaraj et al., J. Vac. Sci. & Technol. B, 26, 2, 2008.
[3] Frenzel et al., Physica Status Solidi (a), 212, 7, 2015.