DS 32: Focussed Session: Oxide Semiconductors for Novel Devices II
Mittwoch, 22. März 2017, 14:45–17:45, CHE 89
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14:45 |
DS 32.1 |
Topical Talk:
Defect induced magnetic or optical properties in gallium-based oxides — •Laurent Binet and Didier Gourier
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15:15 |
DS 32.2 |
Photo- and electroluminescence of chromium doped β-Ga2O3 — •Andreas Fiedler, Zbigniew Galazka, and Klaus Irmscher
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15:30 |
DS 32.3 |
Topical Talk:
Vacancy defects and electrical compensation in gallium oxide — •Filip Tuomisto
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16:00 |
DS 32.4 |
Localized defect states and charge trapping in Al2O3 films prepared by atomic layer deposition — •Karsten Henkel, Malgorzata Kot, and Dieter Schmeißer
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16:15 |
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15 min. break.
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16:30 |
DS 32.5 |
Topical Talk:
Integration of Oxide Semiconductors with Traditional Semiconductors - A New Twist — •Scott Chambers
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17:00 |
DS 32.6 |
Growth-control of the ordered double-perovskite stucture in (Pr0.5Ba0.5)CoO3−δ thin films — •Felix Gunkel, Clemens Hausner, David N. Müller, Lei Jin, Chunlin Jia, Daniel Bick, Theo Schneller, Ilia Valov, and Regina Dittmann
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17:15 |
DS 32.7 |
Influence of annealing on the conductivity and transparency of niobium doped titanium dioxide electrodes prepared by sol-gel and their function in organic solar cells — •Peter Fischer, Roland Rösch, Shahidul Alam, Ulrich Schubert, Harald Hoppe, and Edda Rädlein
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17:30 |
DS 32.8 |
Characterization of Unipolar Zinc-Tin-Oxide Devices — •Sofie Bitter, Peter Schlupp, Holger von Wenckstern, and Marius Grundmann
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