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DS: Fachverband Dünne Schichten
DS 35: 2D Materials Beyond Graphene IV (jointly with O)
DS 35.10: Talk
Wednesday, March 22, 2017, 17:30–17:45, WIL A317
Structural Analysis of h-BN on Cu(111) — •Martin Schwarz1, Manuela Garnica1, Jacob Ducke1, Peter Deimel1, David Duncan2, Ari Seitsonen3, Francesco Allegretti1, Johannes Barth1, and Willi Auwärter1 — 1Physik Department, Technische Universität München, James Franck Str. 1, 85748 Garching, Germany — 2Diamond Light Source, Didcot, Oxfordshire, OX11 0DE, United Kingdom — 3Département de Chimie, École Normale Supérieure, 24 rue Lhomond, F-75005 Paris, France
Atomically thin boron nitride (h-BN) layers on metallic supports represent promising platforms for the adsorption of atoms, clusters, and molecular nanostructures [1-2]. Specifically, STM studies revealed an electronic corrugation of h-BN/Cu(111), guiding the self-assembly of molecules and their energy level alignment. A comprehensive characterization of the h-BN/Cu(111) interface including the spacing between the h-BN sheet and its support - elusive to STM measurements - is crucial to rationalize the interactions within these systems. To this end, we employed complementary techniques including scanning tunneling microscopy (STM), high resolution atomic force microscopy (AFM), low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), X-ray standing wave (XSW) and density functional theory (DFT). Thus, our multi-method study yields a complete, quantitative structure determination of the sp2 bonded BN layer on Cu(111).
[1] Joshi, Sushobhan, et al. NL 12.11 (2012): 5821-5828
[2] Urgel, J. I. et al. JACS 137.7 (2015): 2420-2423