Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 35: 2D Materials Beyond Graphene IV (jointly with O)

DS 35.9: Talk

Wednesday, March 22, 2017, 17:15–17:30, WIL A317

Band gap transition in few-layer ReS₂ investigated by photoemission k-space microscopy — •Mathias Gehlmann¹, Lukasz Plucinski¹, Slavomír Nemšák¹, Irene Aguilera², Gustav Bihlmayer², Pika Gospodarič¹, Markus Eschbach¹, Ewa Młyńczak¹, Giovanni Zamborlini¹, Vitaliy Feyer¹, Florian Kronast³, Philipp Nagler⁴, Tobias Korn⁴, Christian Schüller⁴, Stefan Blügel², and Claus Michael Schneider¹ — ¹PGI-6, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany — ²PGI-1/IAS-1, Forschungszentrum Jülich GmbH and JARA, D-52425 Jülich, Germany — ³Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, D-12489 Berlin, Germany — ⁴Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany

ReS₂ is a promising candidate for novel electronic and sensor applications. The low crystal symmetry of this van der Waals compound leads to highly anisotropic optical and vibrational behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum resolved study of the electronic structure of monolayer, bilayer, and bulk ReS₂. Using photoemission k-space microscopy in combination with density functional theory calculations we demonstrate a significant 3D delocalization of the valence electrons in bulk ReS₂. Furthermore, we directly observe the evolution of the valence band dispersion in our photoemission experiments as a function of the number of layers, revealing a varying character of the band gap.