Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 36: Postersession I

DS 36.10: Poster

Wednesday, March 22, 2017, 17:00–19:00, P2-EG

Bipolar heterodiodes comprising β-gallium oxide — •Peter Schlupp, Daniel Splith, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für experimentelle Physik II, Germany

The large bandgap of 4.9 eV makes β-gallium oxide interesting for many applications e. g. for power electronics or if alloyed with indium oxide for visible- and solar-blind UV photodetectors [1]. In order to fabricate thin film transistors a gate contact is needed. A reasonable option are highly rectifying contacts which can also be used to perform space charge region based spectroscopy. Beside using Schottky diodes [2] these contacts can be realized by using bipolar heterodiodes.

We present β-gallium oxide bipolar heterodiodes grown on sapphire substrates by pulsed laser deposition (PLD). The p-type layers are realized by nickel oxide and amorphous zinc cobalt oxide fabricated by PLD at room-temperature. Best diodes exhibit rectification ratios of more than eight orders of magnitude and ideality factors of about 1.5. Temperature dependent current voltage measurements from 90 K to 300 K will be dicussed as well as space charge region based spectroscopy.

  
References

[1] Zhang et al., Appl. Phys. Lett. 108, 123503 (2016)

[2] Splith et al., Phys. Status Solidi A 211, 40 (2014)