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DS: Fachverband Dünne Schichten

DS 36: Postersession I

DS 36.11: Poster

Mittwoch, 22. März 2017, 17:00–19:00, P2-EG

Temperature dependent investigation on Pt Schottky contacts on PLD grown In₂O₃ thin films — •Steffen Lanzinger, Daniel Splith, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Germany

Indium oxide is a material which, in its highly tin doped form, is already widely used for applications as a transparent conducting oxide. However, in recent years also interest in the semiconducting properties of In₂O₃ arose. First rectifying contacts on In₂O₃ thin films were realized by von Wenckstern et al. [1,2], utilizing reactively sputtered platinum or the p-type semiconductors zinc cobalt oxide or nickel oxide. Utilizing these rectifying contacts, the investigation of electronic defect states using space charge region based measurements was possible [3].

In this contribution we investigated the electrical properties of reactively sputtered platinum Schottky diodes on PLD grown undoped and Mg-doped In₂O₃ on c-plane sapphire by means of current voltage measurements and temperature dependent current voltage measurements between T=85K and T=330K. Additionally, the Schottky contacts were used to investigate the electronic defect states of the In₂O₃ thin films using thermal admittance spectroscopy.
[1] H. von Wenckstern et al., APL Mat., 2, 4: 046104 (2014)
H. von Wenckstern et al., Adv. Electron. Mater., 1, 4 (2015)
F. Schmidt et al., Phys. Status Solidi B, 252, 10: 2304-2308 (2015)