Dresden 2017 – scientific programme
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DS: Fachverband Dünne Schichten
DS 36: Postersession I
DS 36.13: Poster
Wednesday, March 22, 2017, 17:00–19:00, P2-EG
Epitaxial growth of GeTe Phase Change Alloy on Si(111) Substrate by Pulsed Laser Deposition — •Isom Hilmi1, Andriy Lotnyk1, Jürgen W. Gerlach1, Philipp Schumacher1, and Bernd Rauschenbach1,2 — 1Leibniz-Institut für Oberflächenmodifizierung e.V., 04318, Leipzig, Germany — 2Universität Leipzig, Institut für Experimentelle Physik II, 04103, Leipzig, Germany
GeTe phase change thin films have been grown on highly lattice-mismatched Si(111) substrates by means of pulsed laser deposition technique. Depending on the substrate temperature, the films grew in amorphous, oriented polycrystalline and single crystalline structures, consecutively, between RT and 300°C, as revealed by reflection high-energy electron diffraction (RHEED), x-ray diffraction and transmission electron microscopy (TEM). The narrow epitaxial window of GeTe on Si(111) is observed around 230°C. The crystalline thin films grow mainly in a distorted rock-salt structure, with the out-of-plane and in-plane epitaxial relationships were determined to be GeTe[111]//Si[111] and GeTe[11-2]//Si[11-2], respectively. The RHEED and atomic force microscopy measurements revealed that the film grew according to Stranski-Krastanov mode. The TEM measurements showed the presence of overlapping twins and the out of plane rotated grains in the thin films.