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DS: Fachverband Dünne Schichten

DS 36: Postersession I

DS 36.14: Poster

Mittwoch, 22. März 2017, 17:00–19:00, P2-EG

Pulsed laser deposition of epitaxial Sb2Te3 thin films on Si(111) — •Isom Hilmi¹, Andriy Lotnyk¹, Jürgen W. Gerlach¹, Philipp Schumacher¹, and Bernd Rauschenbach^1,2 — ¹Leibniz-Institut für Oberflächenmodifizierung e.V., 04318, Leipzig, Germany — ²Universität Leipzig, Institut für Experimentelle Physik II, 04103, Leipzig, Germany

An attempt to deposit a single crystalline chalcogenide phase change materials is of interests to improve the material performance for an application in non-volatile memory. In this report, the fabrication of high-quality Sb2Te3 by pulsed laser deposition is presented. The thin films were epitaxially grown on Si(111) substartes. The epitaxial growth was achieved at elevated substrate temperature ranging from 130° to 260°C. The films were grown in layer-by-layer mode. X-ray diffraction and transmission electron microscopy reveal that the films possess trigonal Sb2Te3 structure containing twin domains. The thin film growth starts with Sb/Te passivation layer. This results open up the feasibility to fabricate thin multilayer structure of chalcogenide phase change materials.