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DS: Fachverband Dünne Schichten

DS 36: Postersession I

DS 36.21: Poster

Mittwoch, 22. März 2017, 17:00–19:00, P2-EG

Pulsed Radiofrequency sputtering of gallium oxide — •Philipp Schurig¹, Angelika Polity¹, Peter Klar¹, and Martin Eickhoff² — ¹1. Physikalisches Institut, AG Funktionelle Dünnschichten, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen — ²Universität Bremen, Institut für Festkörperphysik, Festkörpermaterialien, Otto-Hahn Allee 1, 28359 Bremen

The interest in transparent semiconductor materials is still at a high level due to possible applications in the field of (opto-)electronics, for example as photoresistors/-diodes and solar cells. One transparent oxide with a band gap of around 4.9 eV is the oxide of gallium, with its thermodynamically most stable phase β-gallium oxide. One critical parameter during deposition is the growth temperature which is relatively high with 650°C for β-gallium oxide. For industrial applications it is desirable to lower this value. Recent studies [Nak14] have shown that pulsed sputter deposition allows an increase of the coupled rf power and at the same time a decrease of the growth temperature without severe structural degradation of the material. This approach was adopted to the deposition of gallium oxide and the influence of parameters like pulse frequency or duty cycle time on the layer characteristics was examined. Nevertheless, post growth annealing was still necessary and performed at temperatures of 1000 °C in oxidizing atmosphere. UV-Vis-NIR, XRD, EDX and SEM measurements were performed after deposition. [Nak14] E. Nakamura et al.: Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique; (2014) Doi: 10.1063/1.4864283