Dresden 2017 – scientific programme
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DS: Fachverband Dünne Schichten
DS 36: Postersession I
DS 36.23: Poster
Wednesday, March 22, 2017, 17:00–19:00, P2-EG
Investigation of the structural and electrical properties of PLD grown gallium oxide thin films on quartz glass — •Laurenz Thyen, Daniel Splith, Stefan Müller, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Germany
For high power electronics, β-gallium oxide (Ga2O3) is of great interest due to its bandgap of 4.5 to 4.9 eV[1] at room temperature. As an alternative to homoepitaxy, being still costly nowadays, and heteroepitaxy on crystalline substrates, we investigated the structural, optical and electrical properties of SiO2-doped β-gallium oxide thin films on quartz glass substrates. In that process, Ga2O3 thin films were fabricated by pulsed laser deposition at different temperatures and oxygen pressures. Additionally, the influence of an undoped Ga2O3 buffer layer was investigated in order to optimize the properties of the thin films on quartz glas. X-ray diffraction measurements yield that the thin films are amorphous up to a growth temperature of 400∘C. At higher temperatures polycrystaline growth was observed.
The roughness of the thin films which were directly grown on glass substrate is comparable to that of thin films grown on c-plane sapphire substrate.
For the investigation of the electrical properties, PtOx-Schottky contacts were fabricated on the Ga2O3 thin films by sputtering. From current-voltage characteristics, ideality factors of 1.2, effective barrier heights up to 1.35 eV and rectification ratios of 107 were determined.
[1] T. Matsumoto et al., Jpn. J. Appl. Phys. 13, 1578 (1974).