Dresden 2017 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 36: Postersession I

DS 36.27: Poster

Mittwoch, 22. März 2017, 17:00–19:00, P2-EG

Epitaxial growth of NiO on GaN(0001) by molecular beam epitaxy and its photocatalytic application — •Melanie Budde, Carsten Tschammer, Jumpei Kamimura, and Oliver Bierwagen — Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

Nickel oxide is a transparent and semiconducting p-type oxide, which is interesting for various applications. For example, it works as a co-catalyst which allows for higher stability and efficiency of GaN photocatalysts for hydrogen generation. Furthermore, it can be used in normally off GaN-based heterojunction field-effect transistors as a gate dielectric to reduce the distance between source and drain. Therefore, well-defined and smooth NiO layers on GaN are required. Here NiO was grown by plasma-assisted molecular beam epitaxy on GaN templates. The topography and layer quality for different growth parameters was investigated using in-situ reflecticion high-energy electron diffraction as well as ex-situ x-ray diffraction and atomic force microscopy. The epitaxial relationship between substrate and layer was defined and rationalized by the concept of domain matching epitaxy. The impact of NiO layers on the stability of the photocatalytic application was tested.