Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 36: Postersession I
DS 36.35: Poster
Mittwoch, 22. März 2017, 17:00–19:00, P2-EG
Comparison of pattern formation of Si and Si3N4 by N+ and N2+ ion irradiation — •Hans Hofsäss, Omar Bobes, and Lukas Janos Richter — Fakultät für Physik, Universität Göttingen, Göttingen, Germany
Recently Bradley and Hofsäss introduced ion implantation as an additional effect contributing to pattern formation. Ion implantation should contribute to surface instability an pattern formation at larger ion incidence angles, typically above 45-50∘. To demonstrate the the effect of ion implantation, we compare N+ and N2+ ion irradiation of Si and silicon nitride substrates. Silicon itride cannot accommodate N beyond the given stoichiometry and implanted N must diffuse out. The stoichiometry of the films remains unchanged irradiation with N and additional N incorporation can be neglected. On the other hand, N will be incorporated into Si and an amorphous SiNx layer will form. Here, implanted N should contribute to pattern formation. We irradiated Si and silicon nitride samples with ions in the energy regime few keV up to 10 keV and ion incidence angles between 60∘ and 75∘. We find no pattern formation on Si3N4 for all investigated irradiation parameters. In contrast, N irradiation of Si leads to pronounced ripple patterns. The behavior can be understood from a comparison with simulation results based on the crater function formalism and Monte Carlo simulations of the ion solid interaction. We find strong support that pattern formation on N ion irradiated Si is mainly determined by N ion implantation.