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DS: Fachverband Dünne Schichten

DS 36: Postersession I

DS 36.37: Poster

Mittwoch, 22. März 2017, 17:00–19:00, P2-EG

Neon ion beam induced surface pattern formation on Si — •Hans Hofsäss, Kun Zhang, and Omar Bobes — Fakultät für Physik, Universität Göttingen, Göttingen, Germany

The development of self-organized surface patterns on Si due to noble gas ion irradiation has been studied extensively in the past. However, in nearly all experiments to date, no pattern formation on Si was observed for ion irradiation with Ne ions [1]. One exception is an experiment carried out by Carter et al. in 1995 where parallel ripple patterns with about 1.1 µm wave length are observed for 20 keV Ne ions incident on Si at an angle of 45^∘ [2].

We present experimental data on pattern formation for Ne ion irradiation of Si with different ion energies and incidence angles larger than 45^∘. Using the crater function formalism and Monte Carlo simulations we calculate curvature coefficients of linear continuum models of pattern formation. Our simulations show that pattern formation is strongly suppressed for most ion energies. However, at very low energies < 500 eV and also for energies above 20 keV parallel ripples can be expected. The role of incorporation of noble gas ions and a reduced density due to possible void formation is discussed.

[1] F. Frost, B. Ziberi, A. Schindler, B. Rauschenbach, Appl. Phys. A 91 (2008) 551.

[2] G. Carter, V. Vishnyakov, Yu. V. Martynenko, and M. J. Nobes, J. Appl. Phys. 78 (1995) 3559.