Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 36: Postersession I
DS 36.38: Poster
Mittwoch, 22. März 2017, 17:00–19:00, P2-EG
Carbon ion beam induced surface pattern formation on amorphous carbon — •Hans Hofsäss, Omar Bobes, and Kun Zhang — Fakultät für Physik, Universität Göttingen, Göttingen, Germany
Using a mass selected carbon ion beam provided by our ion beam deposition system, we are able to perform irradiations of substrates with carbon ions at defined energies between about 100 eV and 60 keV and for variable ion incidence angle. We investigate the formation of ripple patterns on a-C films on Si. The hydrogen-free a-C films with thickness of 270 nm were grown on Si wafers by vacuum arc deposition and had a sp3 bond fraction of about 60 percent. The special interest in carbon ion irradiation has several reasons:
(i) Unlike noble gas ion irradiation, carbon ions are incorporated into the a-C film as self atoms. Therefore we can study the effect of ion implantation on pattern formation without the complication of compound formation.
(ii) The sputter yield of carbon is rather low, in particular for the case of carbon ion irradiation. We therefore have a system where mass redistribution should be the dominant mechanism for pattern formation.
(iii) Carbon is even lighter than Ne and the comparison between C and Ne ion irradiation should provide further insight into the pattern formation mechanisms.
In this contribution we compare recent experimental results with Monte Carlo simulations using the SDTrimSP program.