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DS: Fachverband Dünne Schichten

DS 36: Postersession I

DS 36.39: Poster

Mittwoch, 22. März 2017, 17:00–19:00, P2-EG

Combinatorial approach to structural and electrical properties of (In,Ga)₂O₃ thin films grown by pulsed laser deposition — •R. Hölldobler, H. von Wenckstern, D. Splith, J. Lenzner, H. Hochmuth, M. Lorenz, and M. Grundmann — Universität Leipzig, Fakultät für Physikund Geowissenschaften, Institut für Experimentelle Physik II,Linnéstr. 5, 04103, Leipzig, Germany

Combinatorial approaches in solid state science have been used more and more in recent years for an efficient exploration of novel materials. One approach is the growth of thin films with lateral composition gradient(s) and their spatially resolved characterization. We present the growth of (In,Ga)₂O₃ thin films by pulsed laser deposition (PLD) using a single but segmented PLD target [1]. The samples are deposited at various growth temperatures and oxygen pressures. Spatially resolved investigations of the chemical composition, structural and electrical properties are presented show an interplay between growth temperature, oxygen pressure and desorption of gallium sub-oxides as previously reported for molecular beam epitaxy [2]. Our results allow growth of alloyed thin film with tailored properties for specific application such as rectifiers or photodetectors.
H. von Wenckstern, Z. Zhang, F. Schmidt, J. Lenzner, H. Hochmuth, and M. Grundmann, CrystEngComm 15, 10020 (2013). [2] P. Vogt and O. Bierwagen, Appl. Phys. Lett. 109, 062103 (2016).