Dresden 2017 – scientific programme
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DS: Fachverband Dünne Schichten
DS 36: Postersession I
DS 36.41: Poster
Wednesday, March 22, 2017, 17:00–19:00, P2-EG
In Situ Stress Analysis In Ion-Implanted GaAs — •Paul Kutza, Emanuel Schmidt, Sascha Creutzburg, and Elke Wendler — Institut für Festkörperphysik, Friedrich-Schiller-Universität, Jena, Germany
Stress and damage formation in GaAs ion-implanted at room temperature are investigated. 1 MeV Si-ions are implanted with fluences up to 5E15 cm−2. Various ion fluxes between 3E10 cm−2s−1 and 5E11 cm−2s−1 were applied. The stress evolution during the implantation is investigated in situ by measuring the radius of curvature of a GaAs cantilever via the position of a HeNe laser beam reflected by the bent surface of the GaAs sample. A strong dependence of damage formation on the chosen ion flux is observed. While ion fluxes up to 2.3E11 cm−2s−1 feature a steady increase of stress up to saturation, rates above 3E11 cm−2s−1 exhibit a stress maximum at a certain fluence followed by a significant stress decrease until a lower saturation value is reached. Ex Situ Rutherford Backscattering Spectroscopy in channeling mode (RBS/C) measurements reveal that only samples showing the latter stress evolution have developed an amorphous layer. When only point defects or extended defects are formed, stress relaxation does not occur. The fluence dependences are modeled, combining the damage concentration determined by RBS/C and the stress evolution. Additionally, effects of a low temperature implantation and a sudden shutdown of the Si-ion beam are investigated.