Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 36: Postersession I
DS 36.48: Poster
Mittwoch, 22. März 2017, 17:00–19:00, P2-EG
Solution-processed bottom-contact metal-oxide thin-film transistors with transparent monolayer graphene electrodes — •Ersoy Subasi1, Sebastian Meyer2, Duy-Vu Pham2, Claudia Bock1, and Ulrich Kunze1 — 1Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, Bochum, Germany — 2Evonik Resource Efficiency GmbH, Electronic Solutions, Marl, Germany
In this study we demonstrate the suitability of monolayer graphene (MLG) electrodes for solution-processed metal-oxide thin-film transistors (MOTFTs), which are capable of being used in the field of flexible and transparent low-cost electronics.
Solution-processed metal-oxide films are promising candidates to replace amorphous silicon as the active layer used in TFTs, e.g. in display applications, because of there simplicity, low-cost and high performance. Since conventional metal electrodes are not suitable for transparent electronics graphene is a promising material for next-generation transparent electrodes. We successfully prepared solution-processed bottom-contact MOTFTs with MLG electrodes and mobilities comparable to those of amorphous silicon µFE,sat ≈ 1.4 cm2V−1s−1. Using ultraviolet photoelectron spectroscopy under ambient conditions we determined the work function of the MLG electrodes to 5.0 eV. Since the electron affinity of the metal-oxide amounts approximately 3.7 eV [1] the work function of the MLG electrodes should be reduced (e.g. by doping). We achieved a reduction of the work function via a thin Al-film on top of the MLG electrodes (ΔΦM ≈ −1.0 eV).
O. Lang et al., J. Appl. Phys. 86, 5687 (1999).