Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 36: Postersession I
DS 36.52: Poster
Mittwoch, 22. März 2017, 17:00–19:00, P2-EG
Structural and optical investigations of Sn-doped (Ga,Al)2O3 thin films — •Anna Werner, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Semiconductor Physics Group, Institut für Experimentelle Physik II, Leipzig, Germany
Deep ultraviolet photodiodes find wide use in applications such as flame and oil spill detection or water desinfection. Ga2O3 is a suitable detector material and has a large bandgap of 4.5–4.9 eV[1], which band gap can be increased by alloying with Al2O3.
We present structural and optical investigations of (Ga,Al)2O3-thin films grown by pulsed laser deposition on c-plane sapphire using different oxygen pressure pO2 and temperature Tg. Furthermore the thin films were doped with 1% SnO2 to improve the electric conductivity. We investigated the (Ga,Al)2O3-thin films with X-ray diffraction (XRD), which shows that the crystal grew along the (−2 0 1) direction. Also optical transmission measurements were performed. We find that the cation composition ratio strongly depends on the deposition parameters. For lower (higher) pO2 (Tg) the incorporation of Al is favored due to desorption of gallium sub-oxides during growth[2]. This leads to a change of lattice constant and absorption edge.
[1] T. Matsumoto, M. Aoki, A. Kinoshita, and T. Aono, Jpn. J. Appl. Phys. 13, 1578 (1974)
[2] P. Vogt and O. Bierwagen, APL Mater. 4, 086112 (2016)