Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 38: Focussed Session: Memristive Devices for Neuronal Systems I
DS 38.10: Vortrag
Donnerstag, 23. März 2017, 13:00–13:15, CHE 89
Ion dynamics in double barrier memristive devices — •Sven Dirkmann1, Mirko Hansen2, Martin Ziegler2, Enver Solan3, Karlheinz Ochs3, Hermann Kohlstedt2, and Thomas Mussenbrock4 — 1Ruhr-Universität Bochum, Lehrstuhl für Theoretische Elektrotechnik, 44780 Bochum — 2Christian-Albrechts-Universität zu Kiel, Nanoelektronik, 24143 Kiel — 3Ruhr-Universität Bochum, Lehrstuhl für Digitale Kommunikationssysteme, 44780 Bochum — 4Brandenburgische Technische Universität Cottbus-Senfenberg, Theoretische Elektrotechnik, 03046 Cottbus
In this work we analyze the role of ion transport for the dynamic behavior of a double barrier quantum mechanical memristive device using a consistent simulation model.[1,2] The device consists of an ultra-thin NbxOy solid state electrolyte sandwiched between an Al2O3 tunnel barrier and a Schottky-barrier at the NbxOy/Au interface. Many interesting features, as an intrinsic current compliance, a relatively long retention time and no need for an initialization step, make this device technologically interesting, particularly for applications in neuromorphic systems. The electron transport is mimicked by a lumped element circuit model consistently coupled with a 3D kinetic Monte Carlo model, describing the ion transport. The simulation results prove that the ionic motion within the NbxOy layer is the key factor for the resistive switching behavior.This work is funded by the DFG in the frame of Research Unit FOR2093 "Memristive Devices for Neural Systems".
[1] M. Hansen et al., Scientific Reports 5, 13753 (2015)
[2] S. Dirkmann et al., Scientific Reports 6, 35686 (2016)