Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 38: Focussed Session: Memristive Devices for Neuronal Systems I
DS 38.5: Vortrag
Donnerstag, 23. März 2017, 11:00–11:15, CHE 89
MemFlash: Memristive operation of MOSFETs with external capacitances — •Henning Winterfeld1, Nico Himmel1, Martin Ziegler1, Henning Hanssen2, Detlef Friedrich2, Wolfgang Benecke2, and Hermann Kohlstedt1 — 1Nanoelektronik, Technische Fakultät, Christian-Albrechts Universität zu Kiel, Germany — 2Fraunhofer-Institut für Siliziumtechnologie (ISIT), Itzehoe, Germany
Memristive devices have the potential to act as key elements in neuromorphic circuits. However, system integration has turned out to be difficult, as it requires a wafer level fabrication technology. Therefore, MemFlash cells are an interesting alternative to state-of-the-art memristive devices. MemFlash cells are single floating gate transistors operating in a memristive operation mode. In this talk it will be shown that MOSFETs can act as MemFlash cells by using an external capacitor. Fabricated devices vary in channel length and width with tunneling windows between 4 µm2 and 100 µm2. Furthermore, tunnel barrier thicknesses between 3 nm up to 10 nm were realized. The elevation of charges through the tunneling window onto the floating gate via Fowler-Nordheim tunneling allows hysteresis measurements. Measurements show on-off resistance values of about 40 kOhm and 4.2 GOhm, respectively. The electrical characteristics of those devices will be presented, while based on this data, possible advantages and disadvantages of the MemFlash device with respect to conventional memristive devices will be discussed.
Financial support by the German Research Foundation through FOR 2093 is gratefully acknowledged.