Dresden 2017 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 38: Focussed Session: Memristive Devices for Neuronal Systems I

DS 38.6: Topical Talk

Donnerstag, 23. März 2017, 11:30–12:00, CHE 89

Design and CMOS Co-Integration of ReRAM Devices and Crossbar Arrays for Neuromorphic Applications — •Yusuf Leblebici — Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland

Resistive RAM (ReRAM) elements based on transition-metal oxide layers are rapidly becoming viable options for nonvolatile information storage and for neuromorphic operations, allowing easy integration with conventional CMOS technologies. In this talk, we will review the ongoing research at EPFL on the realization of various ReRAM elements based on TiOx, TaOx, WOx and HfOx layers tailored for low voltage operation, as well as the design and co-integration of the CMOS peripheral circuitry for the read/write operations. In particular, the chip embedding platform enabling post-processing of diced samples for fabrication of memristive elements will be discussed, and examples will be provided for potential neuromorphic functions such as spike-timing-dependent-plasticity (STDP) and back-propagation implemented on cross-bar arrays.