Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 38: Focussed Session: Memristive Devices for Neuronal Systems I

DS 38.8: Talk

Thursday, March 23, 2017, 12:30–12:45, CHE 89

Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces — Patrick Maier, •Fabian Hartmann, Judith Gabel, Maximilian Frank, Silke Kuhn, Philipp Scheiderer, Berengar Leikert, Michael Sing, Lukas Worschech, Ralph Claessen, and Sven Höfling — Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, D-97074 Würzburg

The state- and time-dependent resistance of memristors enables the emulation of synaptic functionalities, and hence memristor-based artificial synapses may be implemented in novel, brain inspired computing architectures. We report reversible and irreversible control of memristive switching in patterned LaAlO3/SrTiO3 interfaces via gate voltages and annealing, respectively. The inherent memory functionality (memristance) can be switched on and off with back gate voltages of a few volts. Irreversible control of the memristive switching is demonstrated by annealing the device at 300 °C in nitrogen atmosphere, during which oxygen vacancies are created in the SrTiO3 substrate. These vacancies release mobile electrons that screen the electric field of the back gate. Tuning the amount of mobile electrons with the annealing time allows switching on and off the memristance at zero gate voltage leading to normally-on and normally-off memristors, respectively. The presented irreversible and reversible control of memristive characteristics may allow to compensate fabrication variabilities of memristors.