Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 39: Thin Film Applications

DS 39.14: Talk

Thursday, March 23, 2017, 13:00–13:15, CHE 91

Growth and characterization of NbSe2 on Al2O3 (0001) using molecular beam epitaxy — •Avanindra Kumar Pandeya, Kai Chang, Amilcar bedoya Pinto, Ilya Kostanovskiy, and Stuart Parkin — Max Planck Institute of Microstructure Physics

The most common way to produce transition metal dichalcogenide (TMDC) thin films is via mechanical exfoliation, a method which is not well-suited to fabricate heterostructures with coherent interfaces or large-area thin film applications. Moreover, spintronic effects such as spin transfer torque are extremely sensitive to the quality of the heterointerface. Our approach is to use molecular beam epitaxy (MBE) to grow in-situ TMDC heterostructures and assess the layer and interface quality using in-situ characterization (RHEED, LEED, XPS and STM). Employing a two-step growth scheme, we achieved high-quality, single-crystalline NbSe2 layers on Al2O3 (0001) substrates. A superconducting transition was observed below 4K and is found to be driven by the carrier density in the metallic layers. The achievement of epitaxial, high-quality TMDC layers with high spin-orbit coupling opens up good prospects to realize an efficient spin transfer in TMDC/ferromagnet bilayers.