Dresden 2017 – scientific programme
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DS: Fachverband Dünne Schichten
DS 41: Layer Properties: Electrical, Optical, and Mechanical Properties II
DS 41.1: Talk
Thursday, March 23, 2017, 15:00–15:15, CHE 91
Magnetoconductivity in ZnMnO thin films with anisotropic, highly conductive surface layers modelled by the Thouless diffusion length and valley degeneracy factor. — •Sahitya V. Vegesna1, Danilo Bürger1, Rajkumar Patra1, Barbara Abendroth2, Ilona Skorupa1,3, Oliver G. Schmidt1,4, and Heidemarie Schmidt1 — 1Material Systems for Nanoelectronics, Technische Universität Chemnitz, 09126 Chemnitz, Germany — 2Institut für Experimentelle Physik, TU Bergakademie Freiberg, Leipziger Straße 23, 09596 Freiberg, Germany — 3Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden, Germany — 4Institute for Integrative Nanosciences, IFW Dresden, Dresden 01069, Germany.
Magnetoresistance (MR) of n-type ZnMnO thin films with Mn 5 at% on sapphire have been studied in in-plane and out-of-plane magnetic fields up to 6 T in the temperature range from 5 K to 300 K. Superimposed positive and negative MR model for ZnCoO thin films [1], has been extended in order to include a valley degeneracy factor which accounts for the formation of electronic levels close to the Fermi level of n-ZnMnO due to substitutional Mn ions and their effect on the negative MR in ZnMnO. MR has been modeled with s-d exchange of 0.2 eV and Mn electron spin (5/2) for single layer transport in two dimensions and for single layer transport in three dimensions and for two layer parallel transport in two and three dimensions. Modeled Thouless diffusion length is proportional to T−0.5 [2]. [1]Q. Xu et al., Phys. Rev. B 76, (2007).[2]T. Andrearczyk et al., Phys. Rev. B 72, (2005).