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DS: Fachverband Dünne Schichten

DS 42: Metallic Nanowires on Semiconductor Surfaces (jointly with O)

DS 42.8: Vortrag

Donnerstag, 23. März 2017, 16:45–17:00, WIL C107

The electronic structure of rare earth silicide nanowires on Si(001) — •Stephan Appelfeller, Martin Franz, Hans-Ferdinand Jirschik, and Mario Dähne — Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin

Trivalent rare earths are known to form silicide nanowires on Si(001). Based on the chemical similarity of the rare earths and the similar appearance of the nanowires in scanning tunneling microscopy, it is generally assumed that the nanowires have the same atomic structure for all rare earths. On the other hand, angle resolved photoemission spectroscopy (ARPES) studies of Gd and Dy silicide nanowires disagree with each other in the observed band structure, even though both studies indicate an one-dimensional dispersion [1,2]. Here, we report on ARPES experiments on Y and Tb silicide nanowires. Their electronic structure is quasi-one-dimensional, showing only small oscillations of the Fermi contours. Furthermore, the disagreement in the literature data is resolved by the observation of strong matrix element effects in our data, in which all the bands described in the literature are observed indicating that the nanowires have the same electronic properties and, consequently, also the same atomic structure.

This work was supported by the DFG (FOR1700, project E2). We kindly acknowledge the support of K. Horn and coworkers, C. Papp, and of BESSY II (HZB Berlin), where the photoemission experiments were carried out at the beamline UE56/2 PGM-1.

[1] H. W. Yeom et al., Phys. Rev. Lett. 95, 205504 (2005).

[2] M. Wanke et al., Phys. Rev. B 83, 205417 (2011).