Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Postersession II
DS 44.15: Poster
Donnerstag, 23. März 2017, 17:00–19:00, P1C
Large area graphene on silicon by carbon ion implantation in copper and subsequent transfer — •Jan Lehnert1, Daniel Spemann1, Stephan Mändl1, Hamza Hatahet1, Aron Varga1, and Bernd Rauschenbach1,2 — 1Leibniz Institute of Surface Modification (IOM), Leipzig, Germany — 2Universität Leipzig, Institut für Experimentelle Physik II, Leipzig, Germany
Despite of many research efforts on graphene it still attracts much interest due to its promising properties. Especially for practical applications it is necessary to produce large area and high quality graphene films which is still a challenge. In this work we present a synthesis method by use of ion beam implantation, annealing and subsequent transfer. Cu foils (cm in size) which were pre-annealed at 950 ∘C for 2 h and analysed by SEM, AFM, XRD and XPS measurements before and after annealing have been implanted with 35 keV carbon ions with a fluence of 1 × 1016 cm−2 at room temperature and subsequently annealed at 850 ∘C for 2 h to form graphene layers on the Cu surface. Afterwards, the graphene was transferred to a SiO2/Si substrate by a PMMA free chemical etching process in which the Cu foils were removed by exposure to a mixture of iron(III) chloride (FeCl3) and hydrochloric acid (HCl). Raman spectroscopy at room temperature after the transfer show nearly defect-free monolayer graphene. Furthermore, SEM and AFM measurements were performed to investigate the size and quality of the synthesised graphene. No graphene was observed on unimplanted samples that were treated with the same annealing procedure.