Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Postersession II
DS 44.34: Poster
Donnerstag, 23. März 2017, 17:00–19:00, P1C
Investigation of Disorder Related Electrical Properties in the Pseudo-Binary Line SnTe-PbTe — •Johannes Reindl1, Alexander Rochotzki1, Zheng Zhen1, Stefan Jakobs1, and Matthias Wuttig1,2 — 11. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany — 2JARA-FIT, RWTH Aachen University, 52056 Aachen, Germany
The solid solutions of the chalcogenides SnTe and PbTe have been thoroughly investigated in the past under the premise of infrared applications, which exploit the small band gap that can be tuned with stochiometry [1]. Of additional interest is the shift from p-type conduction in SnTe to n-type conduction of PbTe that can be described with a band inversion in SnTe and the crossing of the bands at a specific composition of the alloys [1]. In recent years the investigation of topological insulator states has led to the insight that topology is pivotal in this material system and thus SnTe single crystals have been found to be topological crystalline insulators [2].
For industrial applications of the aforementioned effects it would be beneficial to shift from physical vapor deposition fabrication of single crystals to large scale production processes, like sputtering. However, the unique physical properties might get lost due to the formation of structural defects. This general increase of disorder and the subsequent influence on some key electrical properties will be investigated, with special focus on the region of the band crossing.
[1] Dimmock, J. O. et al., Phys. Rev. Lett. 16, 1193 (1966)
[2] Xu, S.-Y. et al., Nat. Commun. 3, 1192 (2012)