Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 44: Postersession II

DS 44.53: Poster

Thursday, March 23, 2017, 17:00–19:00, P1C

3D-Analysis of InGaN-Quantum Wells — •Maximilian Ries — Schwarzschildstraße 8

Modern LEDs (light emitting diodes) are frequently made of III-nitride structures, with applications ranging from lightning, optoelecetronics to life sciences and health care. To allow excellent performances, complex heterostructures must be fabricated with high precision. This study introduces a 3D analysis based on Raman and photoluminescence (PL) spectroscopy of InGaN quantum well (QW) structures. Simultaneous excitation and measurement of PL and Raman modes with a home-built setup allow for non-destructive and efficient determination of QW thickness and In-content, providing valuable information on device performance.