Dresden 2017 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 46: Ion and Electron Beam Induced Processes

DS 46.2: Talk

Friday, March 24, 2017, 09:45–10:00, CHE 89

Material processing via ion beam treatment — •Martin Becker, Angelika Polity, and Peter J. Klar — Institute of Experimental Physics I, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany

In order to deposit polycrystalline thin films on different substrates, sputtering methods are the most established techniques. This broad acceptance is due to the homogeneity and reproducibility of the grown layers with high deposition rates. Conventional RF and DC sputtering, however, are subject to limitations based on substrate heating and volatile impurities to be incorporated into the growing films, both issues being significantly reduced in ion beam sputter deposition (IBSD). Films with high crystalline quality can be produced with an independent control of ion energy, beam direction and current density.

We report on the development of a system for the ion beam processing of semiconductors. In order to deposit thin layers of desired material by IBSD as well as to modify their properties by prior or simultaneous ion beam treatments, different sputter geometries come into play, whose discussion will be part of this presentation. An optimization of the crystalline and optical properties is carried out for oxide-based materials. In addition to binary materials, the advantages of forming ternary materials via dual source operation are discussed. On this basis, composition gradients were produced. Within this framework, self-designed ion sources are characterized according to the requirements of different material science processes.