Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 46: Ion and Electron Beam Induced Processes
DS 46.4: Vortrag
Freitag, 24. März 2017, 10:15–10:30, CHE 89
Epitaxial nitride thin films by ion mass and ion energy selective ion-beam assisted deposition — •Philipp Schumacher1, Michael Mensing1, Jürgen W. Gerlach1, Stephan Rauschenbach2, and Bernd Rauschenbach1,3 — 1Leibniz-Institut für Oberflächenmodifizierung, 04318 Leipzig — 2Max-Planck-Institut für Festkörperforschung, 70569 Stuttgart — 3Fakultät für Physik und Geowissenschaften, 04103 Leipzig
Ion-beam assisted deposition (IBAD) is a versatile tool for the synthesis of thin films, as it offers several degrees of freedom to modify the properties of the fabricated material. Ion sources for IBAD typically provide a blend of ion species with broad distributions of ion kinetic energy in the ion beam. For a fundamental understanding of ion-assisted growth processes, however, it is required to evaluate the influence of ion mass and ion kinetic energy, separately. In this contribution, first a novel setup for hyperthermal IBAD of GaN including a dedicated quadrupole mass filter is presented. The deposition of the model material GaN using only one ion species (N+ or N2+) while independently defining the ion kinetic energy is accomplished. Second, results on GaN thin films synthesized by ion mass and ion energy selective IBAD on both 6H-SiC(0001) and Al2O3(1-102) substrates are presented. Atomic force microscopy is applied to analyze the surface topography. The thin films are shown to be epitaxial as determined by reflection high-energy electron diffraction and x-ray diffraction. The properties of the deposited thin films are compared with respect to the utilized separated parameters.