Dresden 2017 – scientific programme

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DS: Fachverband Dünne Schichten

DS 6: 2D Materials Beyond Graphene I (jointly with O)

DS 6.7: Talk

Monday, March 20, 2017, 12:00–12:15, REC/PHY C213

Chemical and Electronial Repair of Defective MoS₂ Monolayers Through Thiols- — •Anja Förster^1,2, Sibylle Gemming^3,4, Gotthard Seifert², and David Tománek¹ — ¹Physics and Astronomy Department, Michigan State Unversity, East Lansing, Michigan 48824, USA — ²TU Dresden, Center for Advancing Electronics Dresden (cfaed), 01062 Dresden, Germany — ³Institute of Ion Beam Physics and Material Research, Helmholtz-Zentrum Dresden Rossendorf, Center for Advancing Electronics Dresden (cfaed), Bautzner Landstr. 400, 01328 Dresden, Germany — ⁴Insitute of Physics, TU Chemnitz, 09107 Chemnitz, Germany

Molybdenum disulfide (MoS₂) monolayers are promising candidates for new low-power electronic circuits and sensors. In order to ensure their usability for mass-production, it is necessary to heal the defects that significantly affect the electronic properties of MoS₂.

For this purpose, we focus on two defect types: sulfur mono-vacancies and sulfur-adatoms. We show their effect on the density of states (DOS) of MoS₂ and show how thiols can be used to heal these defects.

In detail, the sulfur mono-vacancies introduce defective states near the Fermi-energy to the DOS of MoS₂. Thiols are able to cure those defective states by re-inserting the missing sulfur atoms.

In the case of sulfur adatoms, the Fermi-level of MoS₂ is shifted by 0.7 eV, bring the conducting band very close to ther Fermi-energy. Thiols are able to remove the sulfur adatoms by forming hydrogen sulfide and disulfides. The latter are adsorbed on the MoS₂ surface.