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DS: Fachverband Dünne Schichten

DS 6: 2D Materials Beyond Graphene I (jointly with O)

DS 6.8: Vortrag

Montag, 20. März 2017, 12:15–12:30, REC/PHY C213

Ion-beam mediated patterning of MoS2 monolayers — •Mahdi Ghorbani-Asl¹, Silvan Kretschmer¹, Douglas Spearot², and Arkady Krasheninnikov^1,3 — ¹Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden, Germany — ²Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611, USA — ³Department of Applied Physics, Aalto University School of Science, P.O. Box 11100, 00076 Aalto, Finland

Using analytical potential molecular dynamics combined with first-principles calculations, we study the production of defects in free-standing MoS2 monolayers under ion irradiation for a wide range of ion energies when nuclear stopping dominates. The probabilities of defect production have been studied for various types of defects. We show that depending on the incident angle, ion type and energy, sulfur atoms can be sputtered away predominantly from the top or bottom layers, providing unique opportunities for ion-beam mediated patterning of MoS2. As an example, we study the stability and electronic properties of mixed MoSX compounds where X are chemical elements from group V or VII. We demonstrate that such systems can show metallic character (e.g. MoSF) and further be used to design metal/semiconductor/metal junctions, which exhibit negative differential resistance.