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DS: Fachverband Dünne Schichten

DS 7: Atomic Layer Deposition

DS 7.1: Vortrag

Montag, 20. März 2017, 12:30–12:45, CHE 89

Atomic layer deposition (ALD) for the fabrication of HfO₂- and TiO₂- based resistive switching memories — •Alexander Hardtdegen, Hehe Zhang, and Susanne Hoffmann-Eifert — Peter Grünberg Institute and JARA-Fit, Forschungszentrum Jülich, 52425 Jülich, Germany

One common growth method for ultrathin metal oxide layers used in resistive switching devices is atomic layer deposition. Often used materials for these devices are e.g. HfO₂ and TiO₂, which are generally deposited in the amorphous phase. Nevertheless resistive switching behaves differently even in cells out of the apparently same material, as the switching properties are very sensitive to the amount of oxygen in the functional layers.

In this study, plasma-enhanced ALD HfO₂ is combined with three qualitative different (sub-)stoichiometric TiO₂-layers, comparing either layers which were deposited with liquid injection and bubbler supplied TDMAT or thermal processes with processes based on oxygen plasma as co-reactant. The bilayers were integrated into metal-insulator-metal structures and electrically characterized. The switching behavior gives information about the oxygen amount within the different TiO₂-layers.