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DS: Fachverband Dünne Schichten

DS 7: Atomic Layer Deposition

DS 7.2: Vortrag

Montag, 20. März 2017, 12:45–13:00, CHE 89

Al₂O₃ ALD on pristine graphene — •Marcel Junige¹, Julia Kitzmann², Marion Geidel¹, Grzegorz Lupina², Matthias Albert¹, Christian Wenger², and Johann W. Bartha¹ — ¹Technische Universität Dresden — ²IHP GmbH, Frankfurt (Oder)

Coating monolayer graphene (here: CVD-G) with ultra-thin (<10 nm), continuous (pinhole-free), smooth, and electrically well-insulating films is prerequisite for graphene-based applications in electronics, sensors, etc., but has yet been very challenging due to graphene’s lack of dangling bonds. Thus, the nucleation of a dielectric’s Atomic Layer Deposition (ALD) on CVD-G has commonly been inhibited and the corresponding Volmer-Weber island growth mode has produced sporadic, rough, and electrically leaky deposits, preferentially decorating defects.

Apart from a previous improvement^[1] by pre-treating CVD-G with NF₃, we studied here a lower Al₂O₃ ALD set-point temperature of 200 ^∘C compared to 400 ^∘C on pristine CVD-G. The reduced deposition temperature indeed supported a faster and more dense Al₂O₃ ALD nucleation upon the plane CVD-G surface. The ALD growth initiation, the CVD-G integrity, and the coating morphology were investigated by a unique metrology combination of in-situ real-time Spectroscopic Ellipsometry, in-vacuo X-Ray Photoelectron Spectroscopy, and Atomic Force Microscopy, respectively.

[1]  Junige, M. et al. in Proc. of SPIE Vol. 9519, p. 951915 – DOI:10.1117/12.2181242.