Dresden 2017 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 9: Transport: Graphene and Carbon Nanostructures (jointly with HL/MA/TT)
DS 9.6: Vortrag
Montag, 20. März 2017, 16:15–16:30, HSZ 204
Reversible Photochemical Control of Doping Levels in Supported Graphene — •Marie-Luise Braatz1,2, Nils Richter1,2, Hai I. Wang1, Axel Binder3, Mischa Bonn4, and Mathias Kläui1,2 — 1Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany — 2Graduate School of Excellence Materials Science in Mainz (MAINZ), 55128 Mainz, Germany — 3BASF SE, 67056 Ludwigshafen, Germany — 4Max Planck Institute for Polymer Research, 55128 Mainz, Germany
The type and density of carriers in graphene are important parameters to control its properties. Based on Terahertz (THz)-spectroscopy and electrical characterization of Nitrogen-doped graphene, we show that the doping level can be optically tuned between the p-type and intrinsic n-type regime [1]. This is achieved photochemically by controlling the dynamical equilibrium between the oxygen adsorption and desorption process via UV laser pulse irradiation treatment [2]. This approach is reversible, easy to use and contact free. This simple method can be used to write doping structures with spatial control by a focused laser beam, not requiring sophisticated nanostructuring to generate doping for instance by gate electrodes that need to be defined at the time of device fabrication.
[1] H. I. Wang, M.-L. Braatz et al., submitted (2016)
[2] S. M. Hornett et al., Phys Rev B 90 (2014)